AO4476A 30v n-channel mosfet general description p roduct summary v ds i d (at v gs =10v) 1 5a r ds(on) (at v gs =10v) < 7.7m w r ds(on) (at v gs = 4.5v) < 10.8m w 100% uis tested 100% r g tested symbol v ds drain-source voltage 30 the AO4476A combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is suitable for use as a h igh side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s soic-8 g s d v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q j l thermal characteristics w 3 .1 2 t a =70c j unction and storage temperature range -55 to 150 c units parameter typ max c/w r q j a 31 5 9 40 maximum junction-to-ambient a v 20 gate-source voltage drain-source voltage 30 v a i d 15 1 2 110 mj avalanche current c 36 a 2 7 t a =25c t a =70c p ower dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =25c m aximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g d s soic-8 g s d rev1: september 2010 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4476A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.98 2.5 v i d(on) 110 a 6.4 7.7 t j =125c 10 12 8.6 10.8 m w g fs 45 s v sd 0.74 1 v i s 4 a c iss 920 1150 1380 pf c oss 125 180 235 pf c rss 60 105 150 pf r g 0.55 1.1 1.65 w q g (10v) 16 20 24 nc q g (4.5v) 7.6 9.5 11.4 nc q gs 2 2.7 3.2 nc q gd 3 5 7 nc t d(on) 6.5 ns t 2 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time forward transconductance diode forward voltage v =10v, v =15v, r =1 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =15a gate source charge gate drain charge total gate charge m w i s =1a,v gs =0v v ds =5v, i d =15a v gs =4.5v, i d =12a i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =15a r ds(on) static drain-source on-resistance t r 2 ns t d(off) 17 ns t f 3.5 ns t rr 7 8.7 10.5 ns q rr 11 13.5 16 nc components in life support devices or systems are not authorized. aos does not assume any liability arising o ut of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =15a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1 w , r gen =3 w turn-off fall time i f =15a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev1: september 2010 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4476A typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 0 40 60 80 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 1 0 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =4.5v i d =12a v g s =10v i d =15a 25 c 125 c v ds =5v v g s =4.5v v g s =10v 0 1 0 20 30 40 50 60 70 80 90 100 110 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 5 v 6v 10v 4v 4.5v 40 0 2 0 40 60 80 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 1 0 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =4.5v i d =12a v g s =10v i d =15a 0 5 1 0 15 20 25 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v g s =4.5v v g s =10v i d = 15a 25 c 125 c 0 1 0 20 30 40 50 60 70 80 90 100 110 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 5 v 6v 10v 4v 4.5v rev1: september 2010 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4476A typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =15v i d =15a 0 1 0 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) t a = 25 c t a = 150 c t a = 100 c t a = 125 c 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r d s(on) limited t j( max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 1 0 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =15v i d =15a 0 1 0 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) t a = 25 c t a = 150 c t a = 100 c t a = 125 c 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) t a = 25 c 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r d s(on) limited t j( max) =150 c t a =25 c 100 m s 10ms rev1: september 2010 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4476A typical electrical and thermal characteristics 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja = 75 c/w 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja = 75 c/w rev1: september 2010 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4476A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & wa veforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & wa veforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev1: september 2010 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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